Invention Grant
US08259293B2 Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
有权
深亚微米和纳米CMOS单光子光电检测器像素，具有用于读出数据速率降低通信系统的基于事件的电路
- Patent Title: Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
- Patent Title (中): 深亚微米和纳米CMOS单光子光电检测器像素，具有用于读出数据速率降低通信系统的基于事件的电路
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Application No.: US12531191Application Date: 2008-03-17
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Publication No.: US08259293B2Publication Date: 2012-09-04
- Inventor: Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
- Applicant: Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
- Applicant Address: US MD Baltimore
- Assignee: Johns Hopkins University
- Current Assignee: Johns Hopkins University
- Current Assignee Address: US MD Baltimore
- Agency: Lowenstein Sandler PC
- International Application: PCT/US2008/057205 WO 20080317
- International Announcement: WO2008/113067 WO 20080918
- Main IPC: G01J1/42
- IPC: G01J1/42
Abstract:
An avalanche photodiode is disclosed. The avalanche photodiode includes a substrate of a first conductivity type. A first well of a second conductivity type is formed within the substrate. A second well of the second conductivity type is formed substantially overlying and extending into the first well. A heavily doped region of the first conductivity type is formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region. A guard ring is formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region. An outer well ring of the second conductivity type is formed about the perimeter of the deep well and the guard ring.
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