Invention Grant
US08259246B2 Active matrix substrate, liquid crystal panel, liquid crystal display apparatus, television receiver, and a method for manufacturing active matrix substrate 有权
有源矩阵基板,液晶面板,液晶显示装置,电视接收机以及有源矩阵基板的制造方法

  • Patent Title: Active matrix substrate, liquid crystal panel, liquid crystal display apparatus, television receiver, and a method for manufacturing active matrix substrate
  • Patent Title (中): 有源矩阵基板,液晶面板,液晶显示装置,电视接收机以及有源矩阵基板的制造方法
  • Application No.: US12745821
    Application Date: 2008-08-27
  • Publication No.: US08259246B2
    Publication Date: 2012-09-04
  • Inventor: Yuki Yamashita
  • Applicant: Yuki Yamashita
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: JP2007-312765 20071203
  • International Application: PCT/JP2008/065330 WO 20080827
  • International Announcement: WO2009/072329 WO 20090611
  • Main IPC: G02F1/1343
  • IPC: G02F1/1343
Active matrix substrate, liquid crystal panel, liquid crystal display apparatus, television receiver, and a method for manufacturing active matrix substrate
Abstract:
Each retention capacitor line has retention capacitor line extension (18s) extending from an intersection of a retention capacitor line (18A) and a data signal line (15a) toward each of two intersections of the data signal line (15a) and two scanning signal lines (16a and 16b) adjacent to the retention capacitor line. The retention capacitor line extension (18s) has a part (M3) where the retention capacitor line extension (18s) and the data signal line (15a) overlap each other. A retention capacitor line sub-extension (18c) further extended from the retention capacitor line extension (18s) has a part (M4) where the retention capacitor line sub-extension (18c) and a drain drawing line (19a) overlap each other. On at least one side of an opening (K) of the scanning signal line (16b), the scanning signal line (16b) functions as a gate electrode (10a) of a transistor (12a).
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