Invention Grant
- Patent Title: Non-volatile anti-fuse with consistent rupture
- Patent Title (中): 不挥发性反熔丝具有一致的破裂
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Application No.: US13045725Application Date: 2011-03-11
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Publication No.: US08258586B1Publication Date: 2012-09-04
- Inventor: Allan T. Mitchell , Mark A. Eskew , Keith Jarreau
- Applicant: Allan T. Mitchell , Mark A. Eskew , Keith Jarreau
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L27/115
- IPC: H01L27/115
Abstract:
In an embodiment of the invention, a non-volatile anti-fuse memory cell is disclosed. The memory cell consists of a programmable n-channel diode-connectable transistor. The poly-silicon gate of the transistor has two portions. One portion is doped more highly than a second portion. The transistor also has a source with two portions where one portion of the source is doped more highly than a second portion. The portion of the gate that is physically closer to the source is more lightly doped than the other portion of the poly-silicon gate. The portion of the source that is physically closer to the lightly doped portion of the poly-silicone gate is lightly doped with respect to the other portion of the source. When the transistor is programmed, a rupture in the insulator will most likely occur in the portion of the poly-silicone gate that is heavily doped.
Public/Granted literature
- US20120228724A1 Non-Volatile Anti-Fuse With Consistent Rupture Public/Granted day:2012-09-13
Information query
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