An offset gate semiconductor device includes a substrate and an isolation feature formed in the substrate. An active region is formed in the substrate substantially adjacent to the isolation feature. An interface layer is formed on the substrate over the isolation feature and the active region. A polysilicon layer is formed on the interface layer over the isolation feature and the active region. A trench being formed in the polysilicon layer over the isolation feature. The trench extending to the interface layer. A fill layer is formed to line the trench and a metal gate formed in the trench.