Invention Grant
- Patent Title: Stressed semiconductor using carbon and method for producing the same
- Patent Title (中): 使用碳的强调半导体及其制造方法
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Application No.: US12834226Application Date: 2010-07-12
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Publication No.: US08258579B2Publication Date: 2012-09-04
- Inventor: Kramadhati V. Ravi , Brian S. Doyle
- Applicant: Kramadhati V. Ravi , Brian S. Doyle
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Finch & Maloney PLLC
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively formed or patterned to localize the induced stress.
Public/Granted literature
- US20100276758A1 STRESSED SEMICONDUCTOR USING CARBON AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-11-04
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