A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact at least partially overlaps at least one of the protrusions in the gate. A metal layer is disposed on the insulating layer. The metal layer includes a first structure shifted to a first side of the gate. The first structure at least partially overlaps the contact such that the contact electrically couples the first structure to the gate through the insulating layer.