Invention Grant
- Patent Title: Image sensor photodiode arrangement
- Patent Title (中): 图像传感器光电二极管布置
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Application No.: US12741931Application Date: 2008-11-10
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Publication No.: US08258559B2Publication Date: 2012-09-04
- Inventor: Byoung-Su Lee
- Applicant: Byoung-Su Lee
- Applicant Address: KR Seoul
- Assignee: Siliconfile Technologies Inc.
- Current Assignee: Siliconfile Technologies Inc.
- Current Assignee Address: KR Seoul
- Agency: Kile Park Goekjian Reed & McManus PLLC
- Priority: KR10-2007-0118182 20071120
- International Application: PCT/KR2008/006603 WO 20081110
- International Announcement: WO2009/066894 WO 20090528
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel.
Public/Granted literature
- US20100264464A1 IMAGE SENSOR PHOTODIODE ARRANGEMENT Public/Granted day:2010-10-21
Information query
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