Invention Grant
- Patent Title: Contact structure and semiconductor device
- Patent Title (中): 接触结构和半导体器件
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Application No.: US13052337Application Date: 2011-03-21
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Publication No.: US08258515B2Publication Date: 2012-09-04
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP11-207041 19990722
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00

Abstract:
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material. Accordingly, the portion in which the metallic film is surrounded by the transparent conductive film, the insulating base film, and the protecting film (173) to which it is in contact with, can be avoided from exposure to air because the side surface of the metallic film of the connecting wiring is covered with the protecting film (173).
Public/Granted literature
- US20110169003A1 CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-07-14
Information query
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