Invention Grant
- Patent Title: Device processing method
- Patent Title (中): 设备处理方法
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Application No.: US12770290Application Date: 2010-04-29
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Publication No.: US08258045B2Publication Date: 2012-09-04
- Inventor: Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- Applicant: Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2009-123435 20090521
- Main IPC: H01L21/301
- IPC: H01L21/301
Abstract:
A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
Public/Granted literature
- US20100297855A1 DEVICE PROCESSING METHOD Public/Granted day:2010-11-25
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