Invention Grant
- Patent Title: Semiconductor photodetectors
- Patent Title (中): 半导体光电探测器
-
Application No.: US12253497Application Date: 2008-10-17
-
Publication No.: US08257997B2Publication Date: 2012-09-04
- Inventor: Liang Chen , Chingyin Hong , Fuwan Gan , Dong Pan
- Applicant: Liang Chen , Chingyin Hong , Fuwan Gan , Dong Pan
- Applicant Address: US MA Woburn
- Assignee: Sifotonics Technologies (USA) Inc.
- Current Assignee: Sifotonics Technologies (USA) Inc.
- Current Assignee Address: US MA Woburn
- Agency: Occhiuti Rohlicek & Tsao LLP
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L21/00
Abstract:
In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.
Public/Granted literature
- US20090101909A1 SEMICONDUCTOR PHOTODETECTORS Public/Granted day:2009-04-23
Information query
IPC分类:
