Invention Grant
- Patent Title: Error correction coding in flash memory devices
- Patent Title (中): 闪存设备中的纠错编码
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Application No.: US11928434Application Date: 2007-10-30
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Publication No.: US08239732B2Publication Date: 2012-08-07
- Inventor: Tat Hin Tan , Ed Bautista , Bryan W. Hancock , Jackson Huang , Allan Parker
- Applicant: Tat Hin Tan , Ed Bautista , Bryan W. Hancock , Jackson Huang , Allan Parker
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Turocy & Watson, LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Systems and/or methods that facilitate error correction of data are presented. An error correction code (ECC) control component facilitates enabling or disabling error correction of data being written to or read from memory, such as flash memory, based on ECC indicator data associated with a piece of data. The ECC control component can analyze data, parity code, and/or indicator data associated with the incoming data and/or data stored in the memory location where the incoming data is to be written to determine whether parity code can be written for the incoming data and/or whether error correction can be enabled with respect to the incoming data. Error correction can be enabled when an indicator bit associated with the data is unprogrammed (e.g., bit set to ‘1’ state) and can be disabled by programming the indicator bit (e.g., bit set to a ‘0’ state).
Public/Granted literature
- US20090113272A1 ERROR CORRECTION CODING IN FLASH MEMORY DEVICES Public/Granted day:2009-04-30
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