Invention Grant
US08239617B1 Enterprise data storage system using multi-level cell flash memory
有权
企业数据存储系统采用多层次的单元闪存
- Patent Title: Enterprise data storage system using multi-level cell flash memory
- Patent Title (中): 企业数据存储系统采用多层次的单元闪存
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Application No.: US12705471Application Date: 2010-02-12
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Publication No.: US08239617B1Publication Date: 2012-08-07
- Inventor: Thomas E. Linnell
- Applicant: Thomas E. Linnell
- Applicant Address: US MA Hopkinton
- Assignee: EMC Corporation
- Current Assignee: EMC Corporation
- Current Assignee Address: US MA Hopkinton
- Agent Krishnendu Gupta; Jason A. Reyes; Richard Sharkansky
- Main IPC: G06F12/14
- IPC: G06F12/14
Abstract:
A system including an enterprise data storage system having a plurality of multi-level cell (MLC) flash devices configured as data storage drives. The enterprise data storage system is operated in such a way and the configuration of the MLC flash devices is such that the enterprise data storage system is able to maintain a performance level comparable to that of an enterprise data storage system utilizing single-level cell (SLC) flash devices.
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