Invention Grant
US08238989B2 RF component with a superconducting area having higher current density than a non-superconducting area
有权
具有超导区域的RF分量具有比非超导区域更高的电流密度
- Patent Title: RF component with a superconducting area having higher current density than a non-superconducting area
- Patent Title (中): 具有超导区域的RF分量具有比非超导区域更高的电流密度
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Application No.: US12200902Application Date: 2008-08-28
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Publication No.: US08238989B2Publication Date: 2012-08-07
- Inventor: Corbett R. Rowell
- Applicant: Corbett R. Rowell
- Applicant Address: CN Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Fulbright & Jaworski L.L.P.
- Main IPC: H01B12/02
- IPC: H01B12/02
Abstract:
A Radio Frequency (RF) component comprising a non-superconducting material, and a superconducting material, wherein the superconducting material is disposed in one or more areas of the RF component such that the areas with superconducting material conduct greater current density than do areas with the non-superconducting material.
Public/Granted literature
- US20100056379A1 Mixed Material RF Circuits and Components Public/Granted day:2010-03-04
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