An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support plate has a first primary surface and a second primary surface opposite the first primary surface. The first fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The first fin structure is physically coupled to the support plate with the first edge of the first fin structure attached to the first primary surface of the support plate. The second fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The second fin structure is physically coupled to the support plate with the first edge of the second fin structure attached to the first primary surface of the support plate. The first diode laser is physically coupled between the first and the second fin structures to emit the first laser beam in a direction away from the support plate.