Invention Grant
- Patent Title: Semiconductor memory device and method for operating the same
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US12613347Application Date: 2009-11-05
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Publication No.: US08238186B2Publication Date: 2012-08-07
- Inventor: Ji-Hyae Bae , Sang-Sie Yoon
- Applicant: Ji-Hyae Bae , Sang-Sie Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP &T Group LLP
- Priority: KR10-2008-0111483 20081111
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device is capable of performing a stable high-speed operation while inputting/outputting data. The semiconductor memory device includes an inversion output circuit configured to output a clocking pattern in a clocking mode, and an inversion pin to which the inversion output circuit is connected.
Public/Granted literature
- US20100118635A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME Public/Granted day:2010-05-13
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