Invention Grant
US08238185B2 Non-volatile memory device having temperature compensator and memory system thereof
有权
具有温度补偿器及其存储器系统的非易失性存储器件
- Patent Title: Non-volatile memory device having temperature compensator and memory system thereof
- Patent Title (中): 具有温度补偿器及其存储器系统的非易失性存储器件
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Application No.: US12608295Application Date: 2009-10-29
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Publication No.: US08238185B2Publication Date: 2012-08-07
- Inventor: Seungjae Lee , Sungsoo Lee
- Applicant: Seungjae Lee , Sungsoo Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0108965 20081104
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
Provided is a semiconductor memory device. The semiconductor memory device includes: a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode, wherein the voltage generator adjusts the DC voltage according to offset information about the semiconductor memory device.
Public/Granted literature
- US20100110815A1 Non-Volatile Memory Device Having Temperature Compensator and Memory System Thereof Public/Granted day:2010-05-06
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