Invention Grant
US08238184B2 Sense amplifier with a sensing transmission transistor and a reference transmission transistor operating in saturation regions and data sensing method thereof
有权
具有感测传输晶体管的感测放大器和在饱和区域中工作的参考透射晶体管及其数据感测方法
- Patent Title: Sense amplifier with a sensing transmission transistor and a reference transmission transistor operating in saturation regions and data sensing method thereof
- Patent Title (中): 具有感测传输晶体管的感测放大器和在饱和区域中工作的参考透射晶体管及其数据感测方法
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Application No.: US13038606Application Date: 2011-03-02
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Publication No.: US08238184B2Publication Date: 2012-08-07
- Inventor: Chung-Kuang Chen , Yi-Te Shih , Chun-Hsiung Hung
- Applicant: Chung-Kuang Chen , Yi-Te Shih , Chun-Hsiung Hung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/14
Abstract:
A data sensing method for sensing storage data stored in a memory cell includes the steps of: biasing a sensing node and a reference node to a first voltage in response to a first control signal; discharging the sensing node and the reference node via the memory cell and a reference memory cell, respectively; enabling a latch circuit to amplify a voltage difference between the sensing node and the reference node.
Public/Granted literature
- US20110149669A1 Sense Amplifier and Data Sensing Method Thereof Public/Granted day:2011-06-23
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