Invention Grant
- Patent Title: Magnetic tunnel junction device and fabrication
- Patent Title (中): 磁隧道连接装置及制造
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Application No.: US12638460Application Date: 2009-12-15
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Publication No.: US08238143B2Publication Date: 2012-08-07
- Inventor: Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- Applicant: Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a barrier layer, a free layer, and a magnesium (Mg) capping layer. The free layer is positioned between the barrier layer and the magnesium (Mg) capping layer.
Public/Granted literature
- US20110141796A1 Magnetic Tunnel Junction Device and Fabrication Public/Granted day:2011-06-16
Information query
