A ferroelectric random access memory device has a first bit line, a first ferroelectric capacitor, a second bit line, a second ferroelectric capacitor and a first to fourth MOS transistor. The first bit line is changed to a first data potential according to first data stored in the first ferroelectric capacitor, the second bit line is changed to a second data potential according to second data obtained by inverting a logic of the first data, and then the second MOS transistor and the fourth MOS transistor are turned on.