Invention Grant
- Patent Title: Electrical over-stress detection circuit
- Patent Title (中): 电气过应力检测电路
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Application No.: US12766301Application Date: 2010-04-23
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Publication No.: US08238068B2Publication Date: 2012-08-07
- Inventor: Donelson Arthur Shannon , Alan Lee Westwick
- Applicant: Donelson Arthur Shannon , Alan Lee Westwick
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Cesari & Reed, LLP
- Agent R. Michael Reed
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
In an embodiment, an electrical over-stress (EOS) circuit includes a detection circuit coupled between first and second supply terminals and configured to detect a perturbation in a supply voltage potential between the first and second supply terminals or between a supply voltage potential and a pad voltage of a bond pad. The EOS circuit further includes an alert generation circuit configured to store data indicating an EOS event in response to detecting the perturbation.
Public/Granted literature
- US20100271742A1 Electrical Over-Stress Detection Circuit Public/Granted day:2010-10-28
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