Invention Grant
- Patent Title: Semiconductor device and power supply device using the same
- Patent Title (中): 半导体装置及使用该装置的电源装置
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Application No.: US13243642Application Date: 2011-09-23
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Publication No.: US08237493B2Publication Date: 2012-08-07
- Inventor: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
- Applicant: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-307999 20051024
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
Public/Granted literature
- US20120014155A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME Public/Granted day:2012-01-19
Information query
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