Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12318950Application Date: 2009-01-13
-
Publication No.: US08237491B2Publication Date: 2012-08-07
- Inventor: Norihiko Araki
- Applicant: Norihiko Araki
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-017325 20080129
- Main IPC: H03K17/56
- IPC: H03K17/56

Abstract:
A semiconductor device includes a first conductive type first transistor, a first conductive type second transistor, a first power supply pad arranged between the first transistor and the second transistor and supplying a first potential, a second conductive type third transistor, a second conductive type fourth transistor, a second power supply pad arranged between the third transistor and the fourth transistor and supplying a second potential, a first output pad arranged between the first transistor and the third transistor, and a second output pad arranged between the second transistor and the fourth transistor, in which a direction in which a line connecting the first power supply pad with the second power supply pad extends is perpendicular to a direction in which a line connecting the first output pad with the second output pad extends.
Public/Granted literature
- US20090189676A1 Semiconductor device Public/Granted day:2009-07-30
Information query
IPC分类: