Invention Grant
US08237269B2 High Q transformer disposed at least partly in a non-semiconductor substrate 有权
至少部分地设置在非半导体衬底中的高Q变压器

  • Patent Title: High Q transformer disposed at least partly in a non-semiconductor substrate
  • Patent Title (中): 至少部分地设置在非半导体衬底中的高Q变压器
  • Application No.: US12185044
    Application Date: 2008-08-01
  • Publication No.: US08237269B2
    Publication Date: 2012-08-07
  • Inventor: Yiwu TangZhang Jin
  • Applicant: Yiwu TangZhang Jin
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Jonathan Velasco; S. Hossain Beladi
  • Main IPC: H01L23/48
  • IPC: H01L23/48 H01L27/08
High Q transformer disposed at least partly in a non-semiconductor substrate
Abstract:
An assembly involves an integrated circuit die that is bonded, e.g., flip-chip bonded, to a non-semiconductor substrate by a plurality of low-resistance microbumps. In one novel aspect, at least a part of a novel high-frequency transformer is disposed in the non-semiconductor substrate where the non-semiconductor substrate is the substrate of a ball grid array (BGA) integrated circuit package. At least one of the low-resistance microbumps connects the part of the transformer in the substrate to a circuit in the integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k of at least at least 0.4 and also has a transformer quality factor Q of at least ten. The novel transformer structure sees use in coupling differential outputs of a mixer to a single-ended input of a driver amplifier in a transmit chain of an RF transceiver within a cellular telephone.
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