Invention Grant
US08237269B2 High Q transformer disposed at least partly in a non-semiconductor substrate
有权
至少部分地设置在非半导体衬底中的高Q变压器
- Patent Title: High Q transformer disposed at least partly in a non-semiconductor substrate
- Patent Title (中): 至少部分地设置在非半导体衬底中的高Q变压器
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Application No.: US12185044Application Date: 2008-08-01
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Publication No.: US08237269B2Publication Date: 2012-08-07
- Inventor: Yiwu Tang , Zhang Jin
- Applicant: Yiwu Tang , Zhang Jin
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Jonathan Velasco; S. Hossain Beladi
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/08

Abstract:
An assembly involves an integrated circuit die that is bonded, e.g., flip-chip bonded, to a non-semiconductor substrate by a plurality of low-resistance microbumps. In one novel aspect, at least a part of a novel high-frequency transformer is disposed in the non-semiconductor substrate where the non-semiconductor substrate is the substrate of a ball grid array (BGA) integrated circuit package. At least one of the low-resistance microbumps connects the part of the transformer in the substrate to a circuit in the integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k of at least at least 0.4 and also has a transformer quality factor Q of at least ten. The novel transformer structure sees use in coupling differential outputs of a mixer to a single-ended input of a driver amplifier in a transmit chain of an RF transceiver within a cellular telephone.
Public/Granted literature
- US20100026368A1 HIGH Q TRANSFORMER DISPOSED AT LEAST PARTLY IN A NON-SEMICONDUCTOR SUBSTRATE Public/Granted day:2010-02-04
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