Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12801209Application Date: 2010-05-27
-
Publication No.: US08237261B2Publication Date: 2012-08-07
- Inventor: Nobuyuki Kobayashi
- Applicant: Nobuyuki Kobayashi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-142806 20090615
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device has: a radiator plate that is maintained at a predetermined potential; an SOI (Silicon On Insulator) chip mounted on the radiator plate; and thermal grease applied to an interface between the radiator plate and the SOI chip. The SOI chip has: a first silicon substrate forming a circuit element part; a second silicon substrate facing the radiator plate; and an insulating film formed between the first silicon substrate and the second silicon substrate. The first silicon substrate and the second silicon substrate are electrically connected to each other. The thermal grease is conductive and electrically connects the second silicon substrate and the radiator plate.
Public/Granted literature
- US20100314773A1 Semiconductor device Public/Granted day:2010-12-16
Information query
IPC分类: