Invention Grant
- Patent Title: Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device
- Patent Title (中): 氮化物半导体晶体，氮化物半导体独立基板和氮化物半导体器件的制造方法
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Application No.: US12870332Application Date: 2010-08-27
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Publication No.: US08237245B2Publication Date: 2012-08-07
- Inventor: Hajime Fujikura
- Applicant: Hajime Fujikura
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fleit Gibbions Gutman Bongini & Bianco PL
- Agent Martin Fleit; Paul D. Bianco
- Priority: JP2010-28434 20100212
- Main IPC: H01L29/207
- IPC: H01L29/207 ; H01L21/22
Abstract:
To provide a nitride semiconductor crystal, comprising: laminated homogeneous nitride semiconductor layers, with a thickness of 2 mm or more, wherein the laminated homogeneous nitride semiconductor layers are constituted so that a nitride semiconductor layer with low dopant concentration and a nitride semiconductor layer with high dopant concentration are alternately laminated by two cycles or more.
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