Invention Grant
- Patent Title: Capacitor, method of producing the same, semiconductor device, and liquid crystal display device
- Patent Title (中): 电容器及其制造方法，半导体器件和液晶显示装置
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Application No.: US11880551Application Date: 2007-07-23
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Publication No.: US08237242B2Publication Date: 2012-08-07
- Inventor: Kiwamu Adachi , Satoshi Horiuchi
- Applicant: Kiwamu Adachi , Satoshi Horiuchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rockey, Depke & Lyons, LLC
- Agent Robert J. Depke
- Priority: JP2006-212062 20060803; JP2006-273029 20061004; JP2007-013811 20070124
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.
Public/Granted literature
- US20080029764A1 Capacitor, method of producing the same, semiconductor device, and liquid crystal display device Public/Granted day:2008-02-07
Information query
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