Invention Grant
- Patent Title: Apparatus having a lanthanum-metal oxide semiconductor device
- Patent Title (中): 具有镧金属氧化物半导体器件的设备
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Application No.: US12915578Application Date: 2010-10-29
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Publication No.: US08237216B2Publication Date: 2012-08-07
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
Lanthanum-metal oxide dielectrics and methods of fabricating such dielectrics provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum-metal oxide dielectric is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20110037117A1 LANTHANUM-METAL OXIDE DIELECTRIC APPARATUS, METHODS, AND SYSTEMS Public/Granted day:2011-02-17
Information query
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