Invention Grant
US08237199B2 Cell array of semiconductor memory device and a method of forming the same
有权
半导体存储器件的单元阵列及其形成方法
- Patent Title: Cell array of semiconductor memory device and a method of forming the same
- Patent Title (中): 半导体存储器件的单元阵列及其形成方法
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Application No.: US12850677Application Date: 2010-08-05
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Publication No.: US08237199B2Publication Date: 2012-08-07
- Inventor: Jong-Sun Sel , Jung-Dal Choi , Chang-Seok Kang , Chang-Hyun Lee , Jang-Sik Lee , Vie-Na Kim
- Applicant: Jong-Sun Sel , Jung-Dal Choi , Chang-Seok Kang , Chang-Hyun Lee , Jang-Sik Lee , Vie-Na Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2005-0076884 20050822
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A cell array includes a semiconductor substrate including an active region comprising a first region, a second region, and a transition region, the second region being separated from the first region by the transition region, wherein a top surface of the second region is at a different level than a top surface of the first region. The cell array also includes a plurality of word lines crossing over the first region. The cell array also includes a selection line crossing over the active region, wherein at least a portion of the selection line is located over the transition region.
Public/Granted literature
- US20100317157A1 CELL ARRAY OF SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FORMING THE SAME Public/Granted day:2010-12-16
Information query
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