A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.