Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12191659Application Date: 2008-08-14
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Publication No.: US08237183B2Publication Date: 2012-08-07
- Inventor: Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
- Applicant: Hidefumi Yasuda , Yuko Kato , Yasuharu Sugawara , Toshiyuki Terada , Kazuyoshi Furukawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-212100 20070816; JP2008-044239 20080226
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
Public/Granted literature
- US20090045425A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2009-02-19
Information query
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