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US08237172B2 Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate 有权
具有具有欧姆电极层的碳化硅衬底的半导体器件，其中反应层与碳化硅衬底接触地布置

Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate
Abstract:
A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.
Abstract(Chinese):

根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。 背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

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