Invention Grant
- Patent Title: Thin film transistor substrate and display device
- Patent Title (中): 薄膜晶体管基板和显示装置
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Application No.: US12607190Application Date: 2009-10-28
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Publication No.: US08237162B2Publication Date: 2012-08-07
- Inventor: Toshiaki Arai
- Applicant: Toshiaki Arai
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-284621 20081105
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
Public/Granted literature
- US20100109004A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2010-05-06
Information query
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