Invention Grant
US08237162B2 Thin film transistor substrate and display device 有权
薄膜晶体管基板和显示装置

  • Patent Title: Thin film transistor substrate and display device
  • Patent Title (中): 薄膜晶体管基板和显示装置
  • Application No.: US12607190
    Application Date: 2009-10-28
  • Publication No.: US08237162B2
    Publication Date: 2012-08-07
  • Inventor: Toshiaki Arai
  • Applicant: Toshiaki Arai
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2008-284621 20081105
  • Main IPC: H01L29/04
  • IPC: H01L29/04
Thin film transistor substrate and display device
Abstract:
The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
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