Invention Grant
US08237160B2 Probe pad on a corner stress relief region in a semiconductor chip
有权
在半导体芯片的拐角应力释放区域的探针垫
- Patent Title: Probe pad on a corner stress relief region in a semiconductor chip
- Patent Title (中): 在半导体芯片的拐角应力释放区域的探针垫
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Application No.: US13198408Application Date: 2011-08-04
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Publication No.: US08237160B2Publication Date: 2012-08-07
- Inventor: Hsien-Wei Chen , Chung-Ying Yang , Ying-Ju Chen , Shih-Wei Liang , Ching-Jung Yang
- Applicant: Hsien-Wei Chen , Chung-Ying Yang , Ying-Ju Chen , Shih-Wei Liang , Ching-Jung Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A semiconductor chip includes a corner stress relief (CSR) region. An enhanced structure connects sides of a seal ring structure to surround the CSR region. A device under test (DUT) structure is disposed on the CSR region. A set of probe pad structures is disposed on the CSR region. Two of the set of probe pad structures are electrically connect to the DUT structure.
Public/Granted literature
- US20110284843A1 Probe Pad On A Corner Stress Relief Region In A Semiconductor Chip Public/Granted day:2011-11-24
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