Invention Grant
- Patent Title: Memory cell with silicon-containing carbon switching layer and methods for forming the same
- Patent Title (中): 具有含硅碳交换层的记忆单元及其形成方法
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Application No.: US12711810Application Date: 2010-02-24
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Publication No.: US08237146B2Publication Date: 2012-08-07
- Inventor: Franz Kreupl , Jingyan Zhang , Huiwen Xu
- Applicant: Franz Kreupl , Jingyan Zhang , Huiwen Xu
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/108 ; H01L29/94 ; H01L21/02 ; H01L21/20 ; H01L21/00
Abstract:
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.
Public/Granted literature
- US20110204474A1 MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METHODS FOR FORMING THE SAME Public/Granted day:2011-08-25
Information query
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