Invention Grant
US08237136B2 Method and system for tilting a substrate during gas cluster ion beam processing
有权
在气体簇离子束处理过程中倾斜衬底的方法和系统
- Patent Title: Method and system for tilting a substrate during gas cluster ion beam processing
- Patent Title (中): 在气体簇离子束处理过程中倾斜衬底的方法和系统
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Application No.: US12575931Application Date: 2009-10-08
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Publication No.: US08237136B2Publication Date: 2012-08-07
- Inventor: John J. Hautala , Noel Russell
- Applicant: John J. Hautala , Noel Russell
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: G01J5/00
- IPC: G01J5/00
Abstract:
A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB.
Public/Granted literature
- US20110084215A1 METHOD AND SYSTEM FOR TILTING A SUBSTRATE DURING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2011-04-14
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