Invention Grant
- Patent Title: Method of forming a precursor solution for metal organic deposition and method of forming superconducting thick film using the same
- Patent Title (中): 形成金属有机沉积的前体溶液的方法和使用其形成超导厚膜的方法
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Application No.: US12506189Application Date: 2009-07-20
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Publication No.: US08236733B2Publication Date: 2012-08-07
- Inventor: Sang-Im Yoo , Seung-Hyun Moon , Geo-Myung Shin
- Applicant: Sang-Im Yoo , Seung-Hyun Moon , Geo-Myung Shin
- Applicant Address: KR Seoul KR Gyeonggi-do
- Assignee: Seoul National University Industry Foundation,Sunam Co., Ltd.
- Current Assignee: Seoul National University Industry Foundation,Sunam Co., Ltd.
- Current Assignee Address: KR Seoul KR Gyeonggi-do
- Agency: Rabin & Berdo, P.C.
- Main IPC: H01L39/24
- IPC: H01L39/24 ; C09D5/24 ; B05D5/12

Abstract:
A method for forming a precursor solution for metal organic deposition includes dissolving an additive-free first precursor composed of a rare earth element, a second precursor comprising barium, and a third precursor composed of copper into an acid to form a compound solution; dissolving the compound solution into a solvent to form a pre-precursor solution; and evaporating the solvent from the pre-precursor solution to form a precursor solution having an increased viscosity; wherein at least one of the first precursor, the second precursor, and the third precursor is dissolved into a fluorine-free acid. A method for forming a superconducting thick film from the above precursor solution includes forming a thick film by a one-time coating of the precursor solution having an increased viscosity onto a biaxially-textured base followed by heat treating to form the superconducting thick film having a thickness of about 0.2 μm or more and having no cracking.
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