Method of manufacturing a semiconductor device

Invention Grant

US08236707B2 Method of manufacturing a semiconductor device 失效

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing a semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12882746

Application Date: 2010-09-15
Publication No.: US08236707B2

Publication Date: 2012-08-07
Inventor: Kazuo Kobayashi
Applicant: Kazuo Kobayashi
Applicant Address: JP Tokyo
Assignee: Mitsubishi Electric Corporation
Current Assignee: Mitsubishi Electric Corporation
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2010-039627 20100225
Main IPC: H01L21/31
IPC: H01L21/31

Abstract:

A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction.

Abstract(Chinese):

根据本发明的制造半导体器件的方法包括以下步骤：（a）在SiC衬底上引入氢和氧; 和（b）使所述氢和氧在所述SiC衬底上进行燃烧反应，以通过所述燃烧反应在所述SiC衬底的表面上形成氧化硅膜的栅极氧化膜。

Public/Granted literature

US20110207336A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择