Contact patterning method with transition etch feedback

Invention Grant

US08236699B2 Contact patterning method with transition etch feedback 有权

Title translation: 具有过渡蚀刻反馈的接触图案化方法

Please log in to see more content

Patent Title: Contact patterning method with transition etch feedback
Patent Title (中): 具有过渡蚀刻反馈的接触图案化方法
Application No.: US13021842

Application Date: 2011-02-07
Publication No.: US08236699B2

Publication Date: 2012-08-07
Inventor: Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
Applicant: Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
Applicant Address: US NC Durham KR Suwon-si US NY Armonk SG Singapore DE Neubiberg
Assignee: Infineon North,Samsung Electronics Co., Ltd.,International Business Machines Corporation,Chartered Semiconductor Manufacturing Ltd.,Infineon Technologies AG
Current Assignee: Infineon North,Samsung Electronics Co., Ltd.,International Business Machines Corporation,Chartered Semiconductor Manufacturing Ltd.,Infineon Technologies AG
Current Assignee Address: US NC Durham KR Suwon-si US NY Armonk SG Singapore DE Neubiberg
Agency: F. Chau & Associates, LLC
Main IPC: H01L21/311
IPC: H01L21/311

Contact patterning method with transition etch feedback

Abstract:

A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

Abstract(Chinese):

提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

Public/Granted literature

US20110183443A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK Public/Granted day:2011-07-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀