Invention Grant
- Patent Title: Integrated circuit system with through silicon via and method of manufacture thereof
- Patent Title (中): 具有硅通孔的集成电路系统及其制造方法
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Application No.: US13158660Application Date: 2011-06-13
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Publication No.: US08236688B2Publication Date: 2012-08-07
- Inventor: Pradeep Ramachandramurthy Yelehanka , Denise Tan , Chung Meng Lek , Thomas Thiam , Jeffrey C. Lam , Liang-Choo Hsia
- Applicant: Pradeep Ramachandramurthy Yelehanka , Denise Tan , Chung Meng Lek , Thomas Thiam , Jeffrey C. Lam , Liang-Choo Hsia
- Applicant Address: SG Singapore
- Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
Public/Granted literature
- US20110237072A1 INTEGRATED CIRCUIT SYSTEM WITH THROUGH SILICON VIA AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2011-09-29
Information query
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