Integrated circuit having doped semiconductor body and method

Invention Grant

US08236676B2 Integrated circuit having doped semiconductor body and method 有权

Title translation: 具有掺杂半导体器件的集成电路及方法

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Patent Title: Integrated circuit having doped semiconductor body and method
Patent Title (中): 具有掺杂半导体器件的集成电路及方法
Application No.: US11944903

Application Date: 2007-11-26
Publication No.: US08236676B2

Publication Date: 2012-08-07
Inventor: Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
Applicant: Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
Applicant Address: AT Villach
Assignee: Infineon Technologies Austria AG
Current Assignee: Infineon Technologies Austria AG
Current Assignee Address: AT Villach
Agency: Dicke, Billig & Czaja, PLLC
Priority: DE102006055885 20061127
Main IPC: H01L29/94
IPC: H01L29/94 ; H01L21/22

Integrated circuit having doped semiconductor body and method

Abstract:

An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.

Abstract(Chinese):

公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。一个实施例提供缺陷相关的供体和/或受体。所需的缺陷是通过半导体本体的电子照射产生的。具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

Public/Granted literature

US20080122001A1 INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD Public/Granted day:2008-05-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS