Invention Grant
US08236665B2 Method for manufacturing semiconductor device with SEG film active region
有权
制造具有SEG膜活性区域的半导体器件的方法
- Patent Title: Method for manufacturing semiconductor device with SEG film active region
- Patent Title (中): 制造具有SEG膜活性区域的半导体器件的方法
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Application No.: US12758720Application Date: 2010-04-12
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Publication No.: US08236665B2Publication Date: 2012-08-07
- Inventor: Young Bog Kim
- Applicant: Young Bog Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2006-0048670 20060530
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/20 ; H01L21/36
Abstract:
A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.
Public/Granted literature
- US20100197110A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION Public/Granted day:2010-08-05
Information query
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