Invention Grant
- Patent Title: Phase change memory device accounting for volume change of phase change material and method for manufacturing the same
- Patent Title (中): 相变材料的体积变化的相变记忆体装置及其制造方法
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Application No.: US13313312Application Date: 2011-12-07
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Publication No.: US08236664B2Publication Date: 2012-08-07
- Inventor: Heon Yong Chang
- Applicant: Heon Yong Chang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0020235 20080304
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A phase change memory device includes a silicon substrate including a plurality of active regions which extend in a first direction and are arranged at regular intervals in a second direction perpendicular to the first direction. Switching elements are formed in each active region of the silicon substrate and are spaced apart from one another. Phase change patterns are formed in the second direction and have the shape of lines in such that the phase change patterns connect side surfaces of pairs of switching elements which are placed adjacent to each other in a direction diagonal to the first direction.
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