Invention Grant
US08236659B2 Source and drain feature profile for improving device performance and method of manufacturing same
有权
源极和漏极特征轮廓，用于提高器件性能及其制造方法
- Patent Title: Source and drain feature profile for improving device performance and method of manufacturing same
- Patent Title (中): 源极和漏极特征轮廓，用于提高器件性能及其制造方法
-
Application No.: US12816519Application Date: 2010-06-16
-
Publication No.: US08236659B2Publication Date: 2012-08-07
- Inventor: Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- Applicant: Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
Public/Granted literature
- US20110312145A1 SOURCE AND DRAIN FEATURE PROFILE FOR IMPROVING DEVICE PERFORMANCE AND METHOD OF MANUFACTURING SAME Public/Granted day:2011-12-22
Information query
IPC分类:
