Invention Grant
US08236655B2 Fuse link structures using film stress for programming and methods of manufacture 有权
使用膜应力的熔断器连接结构进行编程和制造方法

Fuse link structures using film stress for programming and methods of manufacture
Abstract:
A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, forming an e-fuse over the at least one STI and depositing an interlevel dielectric (ILD) layer over the e-fuse. Additionally, the method includes removing at least a portion of the at least one STI under the e-fuse to provide an air gap below a portion of the e-fuse and removing at least a portion of the ILD layer over the e-fuse to provide the air gap above the portion of the e-fuse.
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