Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities

Invention Grant

US08236654B2 Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities 有权

Title translation: 通过减少沉积不均匀性来减少包括沟道半导体合金的晶体管中的阈值电压变化

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Patent Title: Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities
Patent Title (中): 通过减少沉积不均匀性来减少包括沟道半导体合金的晶体管中的阈值电压变化
Application No.: US12637112

Application Date: 2009-12-14
Publication No.: US08236654B2

Publication Date: 2012-08-07
Inventor: Stephan Kronholz , Andreas Ott
Applicant: Stephan Kronholz , Andreas Ott
Applicant Address: US TX Austin
Assignee: Advanced Micro Devices, Inc.
Current Assignee: Advanced Micro Devices, Inc.
Current Assignee Address: US TX Austin
Agency: Williams, Morgan & Amerson
Priority: DE102008063402 20081231
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/336

Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities

Abstract:

A threshold adjusting semiconductor material, such as a silicon/germanium alloy, may be provided selectively for one type of transistors on the basis of enhanced deposition uniformity. For this purpose, the semiconductor alloy may be deposited on the active regions of any transistors and may subsequently be patterned on the basis of a highly controllable patterning regime. Consequently, threshold variability may be reduced.

Abstract(Chinese):

基于增强的沉积均匀性，可以选择性地为一种类型的晶体管提供阈值调节半导体材料，例如硅/锗合金。为此，可以将半导体合金沉积在任何晶体管的有源区上，并且随后可以基于高度可控的图案化状态来图案化。因此，阈值变化可能降低。

Public/Granted literature

US20100164014A1 REDUCTION OF THRESHOLD VOLTAGE VARIATION IN TRANSISTORS COMPRISING A CHANNEL SEMICONDUCTOR ALLOY BY REDUCING DEPOSITION NON-UNIFORMITIES Public/Granted day:2010-07-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺