Invention Grant
US08236646B2 Non-volatile memory manufacturing method using STI trench implantation
有权
使用STI沟槽植入的非易失性存储器制造方法
- Patent Title: Non-volatile memory manufacturing method using STI trench implantation
- Patent Title (中): 使用STI沟槽植入的非易失性存储器制造方法
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Application No.: US10703289Application Date: 2003-11-06
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Publication No.: US08236646B2Publication Date: 2012-08-07
- Inventor: Tze Ho Simon Chan , Weining Li , Elgin Quek , Jia Zhen Zheng , Pradeep Ramachandramurthy Yelehanka , Tommy Lai
- Applicant: Tze Ho Simon Chan , Weining Li , Elgin Quek , Jia Zhen Zheng , Pradeep Ramachandramurthy Yelehanka , Tommy Lai
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming two trenches in the semiconductor substrate to define an active region therebetween. An implanted source region is formed in one of the trenches on one side of the active region. An implanted drain region is formed in the other trench on the other side of the active region. Shallow trench isolations are then formed in the trenches. One or more gates are formed over the active region, and contacts to the implanted source region and the implanted drain region are formed.
Public/Granted literature
- US20050101102A1 Non-volatile memory and manufacturing method using STI trench implantation Public/Granted day:2005-05-12
Information query
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