Invention Grant
- Patent Title: Manufacturing method of semiconductor device, semiconductor device, and electronic device
- Patent Title (中): 半导体器件，半导体器件和电子器件的制造方法
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Application No.: US12230331Application Date: 2008-08-27
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Publication No.: US08236630B2Publication Date: 2012-08-07
- Inventor: Hideto Ohnuma , Shunpei Yamazaki
- Applicant: Hideto Ohnuma , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-227042 20070831
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30
Abstract:
An embrittlement layer is formed in a single crystal semiconductor substrate having a (110) plane as a main surface by irradiation of the main surface with ions, and an insulating layer is formed over the main surface of the single crystal semiconductor substrate. The insulating layer and a substrate having an insulating surface are bonded, and the single crystal semiconductor substrate is separated along the embrittlement layer to provide a single crystal semiconductor layer having the (110) plane as a main surface over the substrate having the insulating surface. Then, an n-channel transistor and a p-channel transistor are formed so as to each have a axis of the single crystal semiconductor layer in a channel length direction.
Public/Granted literature
- US20090057726A1 Manufacturing method of semiconductor device, semiconductor device, and electronic device Public/Granted day:2009-03-05
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