Method of forming a multi-channel ESD device

Invention Grant

US08236625B2 Method of forming a multi-channel ESD device 有权

Title translation: 形成多通道ESD器件的方法

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Patent Title: Method of forming a multi-channel ESD device
Patent Title (中): 形成多通道ESD器件的方法
Application No.: US13299193

Application Date: 2011-11-17
Publication No.: US08236625B2

Publication Date: 2012-08-07
Inventor: Ali Salih , Mingjiao Liu
Applicant: Ali Salih , Mingjiao Liu
Applicant Address: US AZ Phoenix
Assignee: Semiconductor Components Industries, LLC
Current Assignee: Semiconductor Components Industries, LLC
Current Assignee Address: US AZ Phoenix
Agent Robert P. Hightower
Main IPC: H01L21/18
IPC: H01L21/18

Method of forming a multi-channel ESD device

Abstract:

In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical, characteristic.

Abstract(Chinese):

在一个实施例中，双端子多通道ESD器件被配置为包括齐纳二极管和多个P-N二极管。在另一个实施例中，ESD器件具有不对称的特性。

Public/Granted literature

US20120064675A1 METHOD OF FORMING A MULTI-CHANNEL ESD DEVICE Public/Granted day:2012-03-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料