Invention Grant
- Patent Title: Method for producing a thyristor
- Patent Title (中): 晶闸管的制造方法
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Application No.: US12620930Application Date: 2009-11-18
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Publication No.: US08236624B2Publication Date: 2012-08-07
- Inventor: Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
- Applicant: Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/332
- IPC: H01L21/332

Abstract:
In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
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