Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US11816696Application Date: 2006-02-20
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Publication No.: US08236614B2Publication Date: 2012-08-07
- Inventor: Sadahito Misumi , Takeshi Matsumura
- Applicant: Sadahito Misumi , Takeshi Matsumura
- Applicant Address: JP Osaka
- Assignee: Nitto Denko Corporation
- Current Assignee: Nitto Denko Corporation
- Current Assignee Address: JP Osaka
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2005-044042 20050221
- International Application: PCT/JP2006/302948 WO 20060220
- International Announcement: WO2006/088180 WO 20060824
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Provided are a semiconductor device producing method with simple production steps while preventing contamination of a bonding pad and preventing warp generation in an adherend such as a substrate, a lead frame, or a semiconductor element, thereby improving yield; an adhesive sheet used in this method; and a semiconductor device obtained by this method. The invention includes a pre-setting step of pre-setting a semiconductor element 13 to an adherend 11 through an adhesive sheet 12, and a wire bonding step of wire bonding the element 13 in the bonding temperatures range of 80 to 250° C. without performing any heating step, wherein, as the adhesive sheet 12, a sheet having a storage elastic modulus of 1 MPa or more in the temperature range of 80 to 250° C. or a storage elastic modulus of 1 MPa or more at any temperature in the temperature range before curing the sheet 12 is used.
Public/Granted literature
- US20090032976A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2009-02-05
Information query
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