Invention Grant
US08236614B2 Semiconductor device manufacturing method 有权
半导体器件制造方法

Semiconductor device manufacturing method
Abstract:
Provided are a semiconductor device producing method with simple production steps while preventing contamination of a bonding pad and preventing warp generation in an adherend such as a substrate, a lead frame, or a semiconductor element, thereby improving yield; an adhesive sheet used in this method; and a semiconductor device obtained by this method. The invention includes a pre-setting step of pre-setting a semiconductor element 13 to an adherend 11 through an adhesive sheet 12, and a wire bonding step of wire bonding the element 13 in the bonding temperatures range of 80 to 250° C. without performing any heating step, wherein, as the adhesive sheet 12, a sheet having a storage elastic modulus of 1 MPa or more in the temperature range of 80 to 250° C. or a storage elastic modulus of 1 MPa or more at any temperature in the temperature range before curing the sheet 12 is used.
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